1/6 advanced data november 2003 stp62NS04Z n-channel clamped 12m w -40ato-220 fully protected mesh overlay? mosfet to-220 1 2 3 internal schematic diagram n typical r ds (on) = 0.012 w n 100% avalanche tested n low capacitance and gate charge n 175c maximum junction temperature description this fully clamped mosfet is produced by using the latest advanced companys mesh overlay pro- cess which is based on a novel strip layout. the in- herent benefits of the new technology coupled with the extra clamping capabilities make this product particularly suitable for the harshest operation con- ditions such as those encountered in the automotive environment .any other application requiring extra ruggedness is also recommended. applications n abs,solenoid drivers n power tools ordering information type v dss r ds(on) i d stp62NS04Z clamped < 0.014 w 40 a (*) sales type marking package packaging stp62NS04Z p62NS04Z to-220 tube www.datasheet.in
stp62NS04Z 2/6 absolute maximum ratings (?)pulse width limited by safe operating area (*) current limited by package (1) i sd 40a, di/dt 100a/s, v dd v (br)dss ,t j t jmax. (2) starting t j =25c,i d =20a,v dd =20v thermal data electrical characteristics (t case = 25c unless otherwise specified) off on (1) symbol parameter value unit v ds drain-source voltage (v gs =0) clamped v v dg drain-gate voltage clamped v v gs gate- source voltage clamped v i d (*) drain current (continuous) at t c = 25c 40 a i d (*) drain current (continuous) at t c = 100c 40 a i dg drain gate current (continuous) 50 ma i gs gate source current (continuous) 50 ma i dm ( ) drain current (pulsed) 160 a p tot total dissipation at t c = 25c 11 0 w derating factor 0.74 w/c dv/dt (1) peak diode recovery voltage slope 5 v/ns e as (2) single pulse avalanche energy 500 mj v esd esd(hbm-c=100 pf, r=1.5 k w) 8kv t stg storage temperature C55to175 c t j operating junction temperature rthj-case thermal resistance junction-case max 1.36 c/w rthj-amb thermal resistance junction-ambient max 62.5 c/w t l maximum lead temperature for soldering purpose (1.6mm from case, for 10sec) 300 c symbol parameter test conditions min. typ. max. unit v (br)dss clamped voltage i d =1ma,v gs = 0 33 v i dss zero gate voltage drain current (v gs =0) v ds =16v tbd a i gss gate-body leakage current (v ds =0) v gs = 10 v tbd a v gss gate-source breakdown voltage i gs = 100 a 18 v symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds =v gs ,i d = 250 a 2 4 v r ds(on) static drain-source on resistance v gs =10v,i d = 20 a 12 14 m w www.datasheet.in
3/6 stp62NS04Z electrical characteristics (continued) dynamic switching on switching off source drain diode note: 1. pulsed: pulse duration = 300 s, duty cycle 1.5 %. 2. pulse width limited by safe operating area. symbol parameter test conditions min. typ. max. unit g fs (1) forward transconductance v ds =15v,i d = 18 a 17.5 s c iss input capacitance v ds =25v,f=1mhz,v gs =0 1330 pf c oss output capacitance 420 pf c rss reverse transfer capacitance 135 pf symbol parameter test conditions min. typ. max. unit q g total gate charge v dd =20v,i d =40a, v gs =10v 34 47 nc q gs gate-source charge 10 nc q gd gate-drain charge 11.5 nc symbol parameter test conditions min. typ. max. unit t r(voff) t f t c t d off voltage rise time fall time cross-over time turn off delay time v clamp =30v,i d =40a, r g =4.7 w, v gs =10v (see test circuit, figure 5) 30 54 90 36 ns ns ns ns symbol parameter test conditions min. typ. max. unit i sd source-drain current 40 a i sdm (2) source-drain current (pulsed) 160 a v sd (1) forward on voltage i sd =40a,v gs =0 1.5 v t rr reverse recovery time i sd = 40 a, di/dt = 100 a/s v dd =20v,t j = 150c (see test circuit, figure 5) 45 ns q rr reverse recovery charge 65 nc i rrm reverse recovery current 2.9 a www.datasheet.in
stp62NS04Z 4/6 fig. 5: test circuit for inductive load switching and diode recovery times fig. 4: gate charge test circuit fig. 2: unclamped inductive waveform fig. 1: unclamped inductive load test circuit fig. 3: switching times test circuit for resistive load www.datasheet.in
5/6 stp62NS04Z dim. mm. inch min. typ max. min. typ. max. a 4.40 4.60 0.173 0.181 b 0.61 0.88 0.024 0.034 b1 1.15 1.70 0.045 0.066 c 0.49 0.70 0.019 0.027 d 15.25 15.75 0.60 0.620 e 10 10.40 0.393 0.409 e 2.40 2.70 0.094 0.106 e1 4.95 5.15 0.194 0.202 f 1.23 1.32 0.048 0.052 h1 6.20 6.60 0.244 0.256 j1 2.40 2.72 0.094 0.107 l 13 14 0.511 0.551 l1 3.50 3.93 0.137 0.154 l20 16.40 0.645 l30 28.90 1.137 ?p 3.75 3.85 0.147 0.151 q 2.65 2.95 0.104 0.116 to-220 mechanical data www.datasheet.in
stp62NS04Z 6/6 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result f rom its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specificati ons mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. ? the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco singapore - spain - sweden - switzerland - united kingdom - united states. ? http://www.st.com www.datasheet.in
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